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TYPICAL PERFORMANCE CURVES (R)
APT150GN120J 1200V
APT150GN120J
E G C E
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
S
OT
22
7
ISOTOP (R)
"UL Recognized"
file # E145592
* 1200V Field Stop * Trench Gate: Low VCE(on) * Easy Paralleling * Intergrated Gate Resistor: Low EMI, High Reliability
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT150GN120J UNIT Volts
1200 30 215 99 450 450A @ 1200V 625 -55 to 150 300
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 6mA) Gate Threshold Voltage (VCE = VGE, I C = 6mA, Tj = 25C) MIN TYP MAX Units
1200 5.0 1.4 5.8 1.7 2.08 100
2
6.5 2.1
Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
2
Volts
I CES I GES RG(int)
Gate-Emitter Leakage Current (VGE = 20V) Integrated Gate Resistor
600 5
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7608
Rev B
11-2005
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C)
A
TBD
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT150GN120J
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 150A TJ = 150C, R G = 4.3 7, VGE = 15V, L = 100H,VCE = 1200V Inductive Switching (25C) VCC = 800V VGE = 15V I C = 150A VGE = 15V MIN TYP MAX UNIT pF V nC
9500 500 400 9.5 800 70 430 450 55 65 675 85 22 27 15 55 65 780 175 23 35 22 mJ
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
RG = 1.0 7 TJ = +25C
Turn-on Switching Energy (Diode)
6
mJ
Inductive Switching (125C) VCC = 800V VGE = 15V I C = 150A
Turn-on Switching Energy (Diode)
66
TJ = +125C
RG = 1.0 7
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC VIsolation WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) RMS Voltage (50-60Hz Sinusoidal Package Weight
Waveform from Terminals to Mounting Base for 1 Min.)
MIN
TYP
MAX
UNIT C/W Volts
0.20 N/A 2500 1.03 29.2 10 1.1
oz gm Ib*in N*m
Torque
Maximum Terminal & Mounting Torque
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages
11-2005 Rev B 050-7608
3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
300 250 200 150 100 50 0
V
GE
= 15V
400 350
APT150GN120J
6.5, 10 &15V 6V
IC, COLLECTOR CURRENT (A)
TJ = -55C TJ = 25C TJ = 125C
IC, COLLECTOR CURRENT (A)
300 250 200 150 100 50 0
TJ = 175C
5.5V
5V 4.5V 4V
300 250 200
FIGURE 1, Output Characteristics(TJ = 25C)
250s PULSE TEST<0.5 % DUTY CYCLE
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 150A C T = 25C
J
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
VCE = 240V VCE = 600V
TJ = -55C 150 100 50 0 TJ = 25C TJ = 125C 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
8 6 4 2 0 0 200
VCE = 960V
400 600 800 GATE CHARGE (nC)
1000
FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 3.5 3 2.5 2 1.5 1 0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
IC = 300A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 300A
IC = 150A IC = 75A
IC = 150A
IC = 75A
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15
0
8
0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 300
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75
250 200 150 100 50 0 -50 11-2005 050-7608 Rev B
0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
60 td(ON), TURN-ON DELAY TIME (ns) 50 40 30 20
td (OFF), TURN-OFF DELAY TIME (ns)
VGE = 15V
1000
APT150GN120J
800
600
VGE =15V,TJ=125C VGE =15V,TJ=25C
400
10 T = 25C, or 125C J
VCE = 800V RG = 1.0 L = 100H
200
0 50 100 150 200 250 300 350 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
400 350 300 tf, FALL TIME (ns) tr, RISE TIME (ns) 250 200 150 100 50
TJ = 25 or 125C,VGE = 15V RG = 1.0, L = 100H, VCE = 800V
0
0 50 100 150 200 250 300 350 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
250
0
VCE = 800V RG = 1.0 L = 100H
200
TJ = 125C, VGE = 15V
150
100
TJ = 25C, VGE = 15V
50
50 100 150 200 250 300 350 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
120,000 EON2, TURN ON ENERGY LOSS (J) 100,000 80,000 60,000 40,000 20,000 0 EOFF, TURN OFF ENERGY LOSS (J)
V = 800V CE V = +15V GE R = 1.0
G
0
0
50 100 150 200 250 300 350 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
50,000
= 800V V CE = +15V V GE R = 1.0
G
0
RG = 1.0, L = 100H, VCE = 800V
0
TJ = 125C
40,000
TJ = 125C
30,000
20,000
10,000
TJ = 25C
TJ = 25C
0 50 100 150 200 250 300 350 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
200,000 SWITCHING ENERGY LOSSES (J)
= 800V V CE = +15V V GE T = 125C
J
0 50 100 150 200 250 300 350 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
120,000 SWITCHING ENERGY LOSSES (J) 100,000 80,000 60,000 40,000 20,000 0
Eoff,300A Eon2,150A Eoff,150A Eoff,75A Eon2,75A
V = 800V CE V = +15V GE R = 1.0
G
0
Eon2,300A
Eon2,300A
160,000
120,000
80,000
Eoff,300A Eon2,150A Eoff,150A Eoff,75A
11-2005
40,000
Rev B
Eon2,75A
050-7608
5 10 15 20 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
20,000 10,000 C, CAPACITANCE ( F) 500 Cies IC, COLLECTOR CURRENT (A)
500 450 400 350 300 250 200 150 100 50
APT150GN120J
P
100 50 Coes Cres 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 D = 0.9 0.7 0.5 0.3 0.1 0.05 10-5 10-4
Note:
ZJC, THERMAL IMPEDANCE (C/W)
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
30
RC MODEL
Junction temp. (C)
FMAX, OPERATING FREQUENCY (kHz)
0.0457
0.025
10
F
5
Power (watts)
0.133
0.569
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
T = 125C J T = 75C C D = 50 % V = 800V CE R = 1.0
G
fmax2 = Pdiss =
0.0221 Case temperature. (C)
30.8
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
70 120 170 220 270 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
20
050-7608
Rev B
11-2005
APT150GN120J
APT100DQ120
10%
Gate Voltage TJ = 125C
td(on)
V CC
IC
V CE
tr 90% 5%
Collector Current
10%
5% Collector Voltage
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90% Gate Voltage td(off) 90% Collector Voltage tf 10% TJ = 125C
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322)
W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places)
11.8 (.463) 12.2 (.480)
8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)
14.9 (.587) 15.1 (.594)
* Emitter
Collector
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
11-2005
30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Rev B
* Emitter Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
050-7608
,019,522 ,182,234 5 ,089,434 5 ,045,903 5 APT's products are covered by one or more of U.S.patents 4,895,810 5
ll ,528,058 and foreign patents. US and Foreign patents pending. A Rights Reserved. ,434,095 5 ,231,474 5 ,283,202 5 ,748,103 5 ,256,583 4 ,503,786 5 5,262,336 6

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